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Demonstration of high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

December 09, 2019

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Researchers have announced the demonstration of high-speed spin-orbit-torque magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.

from Top Technology News -- ScienceDaily https://ift.tt/2sTkiDp

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Demonstration of high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

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